Search results for "1.54 MU-M"

showing 2 items of 2 documents

Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices

2006

The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.

Materials scienceSiliconAstrophysics::High Energy Astrophysical Phenomenalight-emitting deviceschemistry.chemical_elementElectronElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaAugerErbiumCondensed Matter::Materials ScienceELECTROLUMINESCENCEPhysics::Atomic and Molecular ClustersPhysics::Atomic PhysicsQuenchingOPTICAL GAINbusiness.industryCondensed Matter PhysicsElectronic Optical and Magnetic Materials1.54 MU-MchemistryOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERLuminescencebusinessPhysical Review B
researchProduct

Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters

2006

In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…

Materials scienceSiliconElectroluminescent devicechemistry.chemical_elementNanocrystalQUANTUM DOTSElectroluminescenceSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoclustersErbiumIntegrated optoelectronicElectroluminescence (EL)Light-emitting deviceOptical interconnectionElectrical and Electronic Engineeringbusiness.industryDopingOPTICAL-PROPERTIESAtomic and Molecular Physics and OpticsAmorphous solid1.54 MU-MchemistryNanocrystalOptoelectronicsQuantum efficiencySI NANOCRYSTALSENERGY-TRANSFERbusinessErbium
researchProduct